| 2012 |
63. Shu-Yen Liu, J. K. Sheu*, M. L. Lee, Yu-Chuan Lin, S. J. Tu,1 F. W. Huang, and W. C. Lai, ”Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation”, Optics Express Vol. 20, Iss. S2, pp. A190–A196 (2012) |
| 2012 |
62. Y.C. Yang, Jinn-Kong Sheu*, Ming-Lun Lee, Shang-Ju Tu, Feng-Wen Huang, Wei-Chih Lai, Schang Jing Hon, and Tsun Kai Ko, “Vertical InGaN light-emitting diodes with a sapphire-face-up structure”, Optics Express Vol. 20, Iss. 1, 119-124 (2012) |
| 2011 |
61. Liang-Jyi Yan, Cheng Huang Kuo, Jinn-Kong Sheu*, Ming-Lun Lee, Wei-Chun Tseng, “Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN“ Journal of Alloys and Compounds, Vol.516, pp.38-40 (2011) |
| 2011 |
60. Feng-Wen Huang, Jinn-Kong Sheu*, Ming-Lun Lee, Shang-Ju Tu, Wei-Chih Lai, Wen-Che Tsai , and Wen-Hao Chang,” Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetection”, Optics Express Vol. 19, Iss. S6, A1211-1218 (2011) |
| 2011 |
59. Shu-Yen Liu, Yu-Chuan Lin, Jhao-Cheng Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai and J. K. Sheu*,” Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts” Optics Express Vol. 19, Iss. S6, A1196-1201 (2011) |
| 2011 |
57. J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, and G. C. Chi,” Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers” IEEE ELECTRON DEVICE LETTERS, VOL. 32, NO. 10, pp.1400-1401 (2011) |
| 2011 |
56. C. H. Jang, J. K. Sheu*, S. J. Chang, M. L. Lee, C. C. Yang, S. J. Tu, F. W. Huang, and C. K. Hsu,” Effect of Growth Pressure of Undoped GaN Layer on the ESD Characteristics of GaN-Based LEDs Grown on Patterned Sapphire” IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 23, NO. 14, JULY 15, pp.968-970,2011 (2011) |
| 2011 |
55. Chih-Ciao Yang, C. H. Jang, Jinn-Kong Sheu* ,Ming-Lun Lee, Shang-Ju Tu, Feng-Wen Huang, Yu-Hsiang Yeh and Wei-Chih Lai, “Characteristics of InGaN-based concentrator solar cells operating under 150X solar concentration” Optics Express, Vol. 19, Issue S4, pp. A695-A700 (2011) |
| 2011 |
54. Ming-Lun Lee*, T. S. Mue, F.W. Huang, J. H. Yang, and J. K. Sheu,” High-performance GaN metal–insulator–semiconductor ultraviolet photodetectors using gallium oxide as gate layer” Optics Express Vol. 19, Iss. 13, pp. 12658–12663 (2011) |
| 2011 |
53. Shang-Ju Tu, Jinn-Kong Sheu*, Ming-Lun Lee, Chih-Ciao Yang, Kuo-Hua Chang, Yu-Hsiang Yeh, Feng-Wen Huang, and Wei-Chih Lai,” Enhanced output power of GaN-based LEDs with embedded AlGaN pyramidal shells” Optics Express Vol. 19, Iss. 13, pp. 12719–12726 (2011) |
| 2011 |
52. Che-Kang Hsu; Jinn-Kong Sheu; Jia-Kuen Wang; Ming-Lun Lee; Kuo-Hua Chang; Shang-Ju Tu; Wei-Chih Lai” Characteristics of Slice InGaN/GaN Light Emitting Diodes by Focused Ion Beam Milling” Electrochem. Solid-State Lett. 14, H343 (2011) |
| 2011 |
51. Shi, Jin-Wei, Kuo, F. -M., Huang, H. -W., Sheu, Jinn-Kong, Yang, Chih-Ciao, Lai, Wei-Chih, Lee, Ming-Lung,” The Influence of a Piezoelectric Field on the Dynamic Performance of GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer”, IEEE Electron Device Letter, Vol. 32 Issue: 5 Pages: 656-658(2011) |
| 2011 |
50. Shi, Jin-Wei; Huang, H-W ; Kuo, F-M ; Lai, W-C ; Lee, Ming-Lun, and Jinn-Kong Sheu,” Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical-Optical Pump-Probe Technique”, IEEE Transactions on Electron Devices, Vol.58, No.2, PP.495-500 (2011) |
| 2010 |
L.J. Yan, J. K. Sheu, F. W. Huang and M. L. Lee，Polarized edge emission from GaN-based light-emitting diodes sandwiched by dielectric/metal hybrid reflectors，JJournal of Applied Physics， vol.108 ,no.11 ,pp113102-1~113102-5,2010 |
| 2010 |
Shu-Yen Liu, J. K. Sheu, Jhao-Cheng Ye, S.J.Tu, Che-Kang Hsu, M. L. Lee, C. H. Kuo and W.C. Lai，Characterization of n-GaN with Naturally Textured Surface for Photoelectrochemical Hydrogen Generation，Journal of The Electrochemical Society， vol.157 ,no.12 ,H1106-H1109,2010 |
| 2010 |
Jinn-Kong Sheu, Kuo-Hua Chang, Shang-Ju Tu, Ming-Lun Lee, Chih-Ciao Yang, Che-Kang Hsu, and Wei-Chih Lai，InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO2 patterned GaN film，Optics Express， vol.18 ,no.s4 ,A562–A567,2010 |
| 2010 |
Ming-Lun. Lee, T. S. Mue, J. K. Sheu, K.H. Chang, S. J. Tu, and T. H. Hsueh，Effect of Thermal Annealing on the GaN Metal-Oxide-Semiconductor Capacitors with Gallium Oxide Gate Layer，Journal of The Electrochemical Society， vol.157 ,no.11 ,H1019-H1022,2010 |
| 2010 |
C. C. Yang, J. K. Sheu, Xin-Wei. Liang, Min-Shun. Huang, M. L. Lee, K. H. Chang, S. J. Tu, Feng-Wen. Huang, and W. C. Lai，Enhancement of The Conversion Efficiency of GaN-Based Photovoltaic Devices with AlGaN/InGaN Absorption Layers，Applied Physics Letters， vol.97 ,no.2 ,021113-1~021113-3,2010 |
| 2010 |
Shi, Jin-Wei, Huang, H. -W., Kuo, F. -M., Sheu, J. K., Lai, W. -C., Lee, M. L.，Very-High Temperature (200 degrees C) and High-Speed Operation of Cascade GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer，IEEE Photonics Technology Letters， vol.22 ,no.14 ,pp1033-1035,2010 |
| 2010 |
Kuo-Hua Chang, Jinn-Kong Sheu, Ming-Lun Lee, Shang-Ju Tu, Chih-Ciao Yang, Huan-Shao Kuo, J. H. Yang , Wei-Chih Lai，Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy，APPLIED PHYSICS LETTERS， vol.97 ,no.013502 ,013502-1~013502-3,2010 |
| 2010 |
Chung-Hsun Jang, Jinn-Kong Sheu, C. M. Tsai, Shoou-jinn Chang, Wei-Chih Lai, Ming-Lun Lee, T. K. Ko, C. F. Shen, and S.C.Shei，Improved Performance of GaN-Based Blue LEDs with the InGaN Insertion Layer Between the MQW Active Layer and the n-GaN Cladding Layer，IEEE Journal of Quantum Electronics， vol.46 ,no.4 ,pp513-517,2010 |
| 2010 |
S. H. Tu, C. J. Lan, S.H. Wang, M. L. Lee*, K.H.Chang, R. M. Lin, J. Y. Chang and J. K. Sheu，InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer，APPLIED PHYSICS LETTERS， vol.96 ,no.133504 ,133504-1~133504-3,2010 |
| 2010 |
Liang-Jyi Yan, Chih-Chiao Yang, Ming-Lun Lee, Shang-Ju Tu ,Chih-Sung Chang and Jinn-Kong Sheu，AlGaInP/GaP Heterostructures Bonded with Si Substrate to Serve as Solar Cells and Light Emitting Diodes，Journal of the Electrochemical Society， vol.157 ,no.4 ,H452-H454,2010 |
| 2009 |
Shu-Yen Liu, J. K. Sheu, Chun-Kai Tseng, Jhao-Cheng Ye, K.H. Chang, M. L. Lee and W.C. Lai，Improved hydrogen gas generation rate of n-GaN photoelectrode with SiO2 protection layer on the Ohmic contacts from the electrolyte，Journal of the Electrochemical Society， vol.157 ,no.2 ,B266-B268,2009 |
| 2009 |
C. M. Tsai, J. K. Sheu, W.C. Lai , M. L. Lee, S. J. Chang , C. S. Chang, T. K. Ko and C. F. Shen，GaN-based LEDs output power improved by textured GaN/sapphire interface using in-situ SiH4 treatment process during epitaxial growth，IEEE Journal of Selected topics in Quantum Electronics， vol.15 ,no.4 ,pp1275-1280,2009 |
| 2009 |
J. K. Sheu, K.H. Chang, M. L. Lee, J. F. Huang, K. S. Kang, W. L. Wang, W. C. Lai and T. H. Hsueh，Characterization of gallium-doped zinc oxide contact on n-type gallium nitride epitaxial layers，Journal of the Electrochemical Society， vol.156 ,no.8 ,H679-H683,209 |
| 2009 |
Jin-Kong Sheu, Chih-Ciao Yang, Shang-Ju Tu, Kuo-Hua Chang, Ming-Lun Lee , Wei-Chih Lai, Li-Chi Peng，Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers，IEEE Electron Device Letter， vol.30 ,no.3 ,pp225-227,2009 |
| 2009 |
M. L. Lee*, Ping-Feng Chi and J. K. Sheu，Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio，Applied Physics Letters， vol.94 ,no.1 ,pp013512-1~013512-3,2009 |
| 2008 |
33.J. K. Sheu, K. H. Chang and M. L. Lee,Ultraviolet band-pass photodetectors formed by Ga-doped ZnO contacts to GaN ,Applied Physics Letters ,vol.11 ,no.92 ,pp.113512-1~113512-3 ,2008 |
| 2008 |
M. L. Lee, J. K. Sheu and Yung-Ru Shu,32. Ultraviolet bandpass Al0.17Ga0.83N/GaN heterojunction phototransistors with high optical gain and high rejection ratio ,Applied Physics Letters ,vol.5 ,no.92 ,pp.053506-1~.053506-3 ,2008 |
| 2008 |
J. K. Sheu, K. H. Chang , M. L. Lee，Ultraviolet band-pass photodetectors formed by Ga-doped ZnO contacts to GaN，Applied Physics Letters， vol.92 ,no.11 ,pp113512-1~113512-3,2008 |
| 2008 |
J. K. Sheu, M. L. Lee, Y. S. Lu, and K. W. Shu，Ga-Doped ZnO Transparent Conductive Oxide Films Applied to GaN-Based Light-Emitting Diodes for Improving Light Extraction Efficiency，IEEE Journal of Quantum Electronics， vol.12 ,no.44 ,pp.1211-1218,2008 |
| 2008 |
J. K. Sheu, I. Hsiu Hung, W. C. Lai, S. C. Shei and M. L. Lee，Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads，Applied Physics Letters， vol.10 ,no.93 ,103507-1~103507-3,2008 |
| 2008 |
M. L. Lee, J. K. Sheu, Yung-Ru Shu，Ultraviolet bandpass Al0.17Ga0.83N/GaN heterojunction phototransistors with high optical gain and high rejection ratio，Applied Physics Letters， vol.92 ,no.5 ,pp053506-1~.053506-3,2008 |
| 2007 |
M. L. Lee, J. K. Sheu, and C. C Hu,Nonalloyed Cr-Au-based Ohmic contacts to n-GaN ,Applied Physics Letters ,vol.18 ,no.91 ,pp.182106-1~182106-3 ,2007 |
| 2007 |
29. J. K. Sheu, K. W. Shu, M. L. Lee, C. J. Tun and G. C. Chi,Effect of Thermal Annealing on Ga-doped ZnO Films Prepared by Magnetron Sputtering ,Journal of The Electrochemical Society ,vol.154 ,no.6 ,pp.H521-H524 ,2007 |
| 2007 |
30. J. K. Sheu, Y. S. Lu, M. L. Lee, Wei-Chih Lai, C. H. Kuo and Chun-Ju Tun,Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer ,Applied Physics Letters ,vol.90 ,no.26 ,pp.263511-1~263511-3 ,2007 |
| 2007 |
28.M. L. Lee and J. K. Sheu,GaN-based Ultraviolet p-i-n Photodiodes with Buried p-layer Structure Grown by MOVPE ,Journal of the Electrochemical Society ,vol.154 ,no.3 ,pp.H182~H184 ,2007 |
| 2006 |
27. M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Tun, and G. C. Chi,Improved Performance of Planar GaN-based p-i-n Photodetectors with Mg-implanted Isolation Ring ,Applied Physics Letters ,vol.89 ,no.18 ,pp.183509-1-183509-3 ,2006 |
| 2006 |
26. Ko TK, Chang SJ, Sheu JK, Shei SC, Chiou YZ, Lee ML, Shen CF, Chang SP, Lin KW,AlGaN/GaN Schottky-barrier UV-B bandpass photodetectors with ITO contacts and LT-GaN cap layers ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY ,vol.21 ,no.8 ,pp.1064-1068 ,2006 |
| 2006 |
24. M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao, C. J. Tun, and G. C. Chi,Planar ultra-violet photodetectors formed by Si implantation into p-GaN ,Journal of the Electrochemical Society ,vol.193 ,no.9 ,pp.799-801 ,2006 |
| 2006 |
25. M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao, and G. C. Chi, 2006,Planar GaN p-i-n photodiodes with n+-conductive channel formed by Si implantation ,Applied Physics Letters ,vol.88 ,pp.203508-1-203508-3 ,2006 |
| 2006 |
23. Shih-Chang Shei , Chi-Ming Tsai, Jinn-Kong Sheu,Wei-Chi Lai , Ming-Lun Lee, and Cheng-Huang Kuo,Emission Mechanism of Mixed-color InGaN/GaNMulti-quantum Well Light-emitting Diodes ,Jpn. J. Applied Physics ,vol.145 ,no.4A ,pp.2463-2466 ,2006 |
| 2006 |
22. J. K. Sheu, C. M. Tsai, M. L. Lee, S. C .Shei and W. C. Lai,InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface ,Applied Physics Letters ,vol.88 ,pp.113505-1-113505-3 ,2006 |
| 2006 |
21. C. J. Tun, J. K. Sheu, M. L. Lee, C. C. Hu, C. K. Hsieh and G. C. Chi ,Journal of the Electrochemical Society. ,vol.153 ,no.4 ,pp.296-298 ,2006 |
| 2006 |
18. Chun-Ju Tun , Jinn-Kong Sheu, Bao-Jen Pong, Min-Lum Lee, Ming-Yu Lee, Cheng-Kang Hsieh, Ching-Chung Hu, and Gou-Chung Chi,Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer ,IEEE. Photon. Technol. Lett. ,vol.18 ,no.1 ,pp.274-276 ,2006 |
| 2006 |
19.J. K. Sheu, M. L. Lee, C. J. Tun, S.W. Lin,Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN ,Appl. Phys. Lett. ,vol.88 ,pp.043506-1-043506-3 ,2006 |
| 2006 |
20.M. L. Lee, J. K. Sheu, and S. W. Lin,Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer ,Applied Physics Letters ,vol.88 ,pp.032103-1-032103-3 ,2006 |
| 2005 |
15.J. K. Sheu, S. S. Chen, M. L. Lee, W. C. Lai, W. H. Chang, and G. C. Chi,Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metal-organic vapor-phase ,Journal of the Electrochemical Society ,vol.152 ,no.11 ,pp.813-815 ,2005 |
| 2005 |
17. C. J. Kao, M. C. Chen, C.J. Tun, G. C. Chi, J. K. Sheu, W. C. Lai, M. L. Lee, F.Ren and S.J.Pearton,Comparison of Low Temperature GaN/SiO2/Si3N4 as gate insulators on AlGaN/GaN Heterostructure Field Effect Transistors ,Journal of Applied Physics ,vol.198 ,pp.064506-1-064506-3 ,2005 |
| 2005 |
14. J. K. Sheu, M. L. Lee, H. C. Tseng, W. C. Lai, and G. C. Chi,Rectifying characteristics of WSi0.8--GaN Schottky barrier diodes with a GaN cap layer grown at low temperature ,Journal of Applied Physics. ,vol.86 ,pp.036106- ,2005 |
| 2005 |
13. J. K. Sheu, M. L. Lee, and W. C. Lai, 2005,”Aluminum gallium nitride ultraviolet p-i-n photodiodes with buried p-layer structure,Aluminum gallium nitride ultraviolet photodiodes with buried p-layer structure ,Appl. Phys. Lett. ,vol.87 ,pp.043501-1-043501-3 ,2005 |
| 2005 |
16. T. K. Ko, S. J. Chang, Y. K. Su, M. L. Lee, C. S. Chang, Y. C. Lin, S. C. Shei, J. K. Sheu, W. S. Chen, and C. F. Shen,AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers ,Journal of Crystal growth ,vol.283 ,pp.68-71 ,2005 |
| 2004 |
10. M. L. Lee, J. K. Sheu, Y. K. Su, S. J. Chang,W. C. Lai, and G. C. Chi,Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer ,IEEE Electron Device Letters ,vol.25 ,pp.593-595 ,2004 |
| 2004 |
11. C. J. Kao, J. K. Sheu, W. C. Lai , M. L. Lee, M. C. Chen and G. C. Chi,Effect of low-temperature-grown GaN cap layer on electrical properties of Al0.25Ga0.75N/GaN heterojunction field-effect transistors ,Appl. Phys. Lett. ,vol.85 ,pp.1430-1432 ,2004 |
| 2004 |
12. J. K. Sheu, M. L. Lee, and W. C. Lai,Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes ,Appl. Phys. Lett. ,vol.86 ,pp.052103-1-052103-3 ,2004 |
| 2003 |
J. K. Sheu, C. J. Kao, M. L. Lee, W. C. Lai, L. S. Yeh, G. C. Chi, S. J. Chang, Y. K. Su and J. M. Tsai,Low-dark current, high-sensitivity metal-semiconductor-metal ultraviolet photodetectors based on GaN with low-temperature GaN intermediate layer ,Journal Electronic Materials ,vol.32 ,pp.400-402 ,2003 |
| 2003 |
9. M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen,C. J. Kao, J. M. Tsai and G. C. Chi,Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer ,Journal Appl. Phys. ,vol.94 ,pp.1753-1757 ,2003 |
| 2003 |
X. D. Chen, Y. Huang, S. Fung, C. D. Beling, C. C. Ling, J. K. Sheu, M. L. Lee,,Deep level defect in Si-implanted GaN n+-p junction ,Applied Physics Letters ,vol.82 ,pp.3671-3673 ,2003 |
| 2003 |
S. J. Chang, M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, C. S. Chang, C. J. Kao, G. C. Chi, and J. M. Tsai,GaN Metal–Semiconductor–Metal Photodetectors With Low-Temperature-GaN Cap Layers and ITO Metal Contacts ,IEEE Electron Device Letters ,vol.24 ,pp.212-214 ,2003 |
| 2003 |
8. M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen,C. J. Kao, J. M. Tsai and G. C. Chi,GaN Schottky barrier photodetectors with a low-temperature GaN cap layer ,Applied Physics Letters ,vol.82 ,no.17 ,pp.2913-2915 ,2003 |
| 2003 |
L. S. Yeh, M. L. Lee, J. K. Sheu, M. G. Chen , C. J. Kao, G. C. Chi, S. J. Chang and Y. K. Su,Visible–blind GaN p–i–n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure ,solid-state Electronics ,no.47 ,pp.873-878 ,2003 |
| 2002 |
J. K. Sheu, M. L. Lee, L. S. Yeh, C. J. Kao, C. J. Tun, , M. J. Chen, G. C. Chi, S. J. Chang , Y. K. Su and C. T. Lee,Planar GaN n+-p photodetectors formed by Si implants into p-GaN ,Applied Physics Letters ,vol.81 ,no.22 ,pp.4263-4265 ,2002 |
| 2002 |
J. K. Sheu, M. L. Lee , C. J. Tun, C. J. Kao, L. S. Yeh, C. C. Lee, and G. C. Chi,Characterization of Si implants in p-type GaN ,IEEE J. Selected topics in Quantum Electronics ,vol.18 ,no.4 ,pp.767-772 ,2002 |
| 2002 |
M. L. Lee, J. K. Sheu, L. S. Yeh, M. S. Tsai, C. J. Kao, C. J. Tun, S. J. Chang and G. C. Chi,GaN p-n junction diode formed by Si ion implantation into p-GaN ,solid-state electronics ,vol.46 ,no.12 ,pp.2179-2183 ,2002 |