| 2011 |
Mei-Li Chen*, Chun-Chieh Fang, and Chun-Rong Lin, “Synthesis of Mn-doped zinc blende ZnSe nanocrystals＂International Symposium on Nano Science and Technology (ISNST), pp. 96-97, Nov., 2011. |
| 2010 |
Mei-Li Chen*, Shang-Che Chung, Geng-Wei Lin, and Hung-Chang Lin,A Two-Dimensional Analytical Model for Nano Single Halo Dual-Material Double Gate MOSFET,2010 International Conference on Optics and Photonics in Taiwan(OPT'10) |
| 2010 |
Mei-Li Chen*, Shang-Che Chung, Geng-Wei Lin, and Hung-Chang Lin, 2010 “A Two-Dimensional Analytical Model for Nano Single Halo Dual-Material Double Gate MOSFET” , International Conference on Opticals and Photonics in Tawian , OPT1-P-123, P.141, December 03-04, Tainan, Taiwan. |
| 2009 |
M. L. Chen*，W. K. Lin，and S. F. Chen, “A Two-Dimensional Analytical Threshold Voltage Model for Symmetrical Tri-Material Gate Stack Double Gate (STMGSDG) MOSFET，s”, International Electron Devices and Materials Symposium, Taoyuan, Taiwan. (2009). |
| 2008 |
M. L. Chen and T. K. Chiang,Analytical Modeling of Quantization and Volume Inversion for Nanoscale Surrounding-Gate MOSFETS,International Symposium on Nano Science and Technology |
| 2008 |
M. L. Chen* and T. K. Chiang, “Analytical Modeling of Quantization and Volume Inversion for Nanoscale Surrounding- Gate MOSFETs＂International Symposium on Nano Science and Technology (ISNST), pp. 204-205, Nov., 2008. |
| 2007 |
T. K. Chiang, M. L. Chen and H. K. Wang , “A New Two-dimensional Model for Dual Material Surrounding-Gate (DMSG) MOSFET’s＂, IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), pp. 597-600, Dec., 2007. |
| 2007 |
6. T. K. Chiang and M. L. Chen, “A Three-Dimensional Analytical Model for subthreshold behavior in fully-depleted SOI FinFET”, International Symposium on Nano Science and Technology (ISNST), pp. 282-283, Nov., 2007. |
| 2007 |
T. K. Chiang and M. L. Chen, “Quantum Mechanical Threshold Voltage Model for Short-Channel Symmetrical Double-Gate Nanoscale MOSFETs＂, International Symposium on Nano Science and Technology (ISNST), pp. 280-281, Nov., 2007 |
| 2007 |
8. T. K. Chiang, Y. K. Shiau and M. L. Chen, “A New Two-Dimensional Analytical Model for Fully Depleted Dual Material Gate SOI MOSFET’s＂, International Symposium on Nano Science and Technology (ISNST), pp. 293-294, Nov., 2007 |
| 2006 |
9. T. K. Chiang and M. L. Chen, “A New Analytical Two-Dimensional Threshold Voltage Model for Symmetrical Dual-Material Double-Gate MOSFETs＂, International Electron Devices and Materials Symposia (IEDMS), pp. 397-398, Dec., 2006. |
| 2006 |
T. K. Chiang and M. L. Chen, “A New Two-Dimensional Analytical Model for Threshold Voltage in DG MOSFETs with High-K Gate ＂, International Symposium on Nano Science and Technology (ISNST), pp. 288-289, Nov., 2006. |
| 2005 |
T. K. Chiang and M. L. Chen, “A New Two-Dimensional Analytical Model for Threshold Voltage in DG MOSFETs＂, International Symposium on Nano Science and Technology (ISNST), pp. 201-202, Nov., 2005. |
| 2004 |
12. T. K. Chiang and M. L. Chen, “A compact, continuous analytic I-V model for surrounding-gate MOSFETs＂, IEEE International Conference on Solid-State and Integrated-Circuits Technology (ICSICT), pp.1196--1200, Oct., 2004. |