| 2010 |
Chi-Yew Hong ; Tsai, Sheng-Fong; Chang, Han-Chen; Lin, Wen-Tai; Wu, Kuen-Hsien，Ag-Catalyzed Growth of Ge Nanostructures via the Thermal Evaporation of Ge Powder，Journal of Nanoscience and Nanotechnology， vol.10 ,no.7 ,4773-4776,2010 |
| 2010 |
吳坤憲，黃峯偉，漸變蝕刻技術應用於多孔矽光感測器之研究，南台科技大學學報， vol.35 ,no.1 ,pp61-70,2010 |
| 2010 |
Shi-Mian Chao, Teen-Hang Meen, Wen-Ray Chen, Kuen-Hsien Wu, Yu-Sung Liu, Wen-Cheng Tzou, Chien-Jung Huang，Synthesis of Fe-core/Au-shell Nanoparticles Under Ambient Pressure，Key Engineering Materials， no.434 - 435 ,pp799-802,2010 |
| 2009 |
Yen-Ting Chiang, Yean-Kuen Fang, Tse-Heng Chou, Cheng-I Lin, Feng-Renn Juang, Ta-Wei Kuo, Kuen-Hsien Wu, Mingtsu Ho, and Jin-Shu Shie，N-SiCN/P-Silicon Heterojunction With Porous Silicon Buffer Layer for Low-Cost and High-Temperature Ultraviolet (UV) Detecting Applications，IEEE SENSORS JOURNAL， vol.9 ,no.7 ,pp849-853,2009 |
| 2009 |
吳坤憲，林哲緯，應用於光伏元件之奈米多孔矽的製備與研究，南台科技大學學報， vol.34 ,no.1 ,pp89-102,2009 |
| 2003 |
T. H. Meen, I. J. Chu, S. H. Lin, K. H. Wu, C. M. Hsu, and C. J. Huang,Evidence from the low-temperature specific heat for d-ware pairing symmetry in Pr1.85Ce0.15CuO4 ,Jpn. J. Appl. Phys. ,vol142 ,pp.88-90 ,2003 |
| 2003 |
吳坤憲,在多孔矽半絕緣基板上研製高溫應用之低暗電流碳化矽光感測元件 ,工程科技通訊 ,pp.1-5 ,2003 |
| 2001 |
W. T. Hsieh, Y. K. Fang, W. J. Lee, C. W. Ho, and K. H. Wu,To Suppress Dark Current of High Temperature inβ-SiC/Si Optoelectronic Devices with Porous Silicon Substrate ,Electronics Letters ,vol.36 ,no.22 ,pp.1869-1870 ,2001 |
| 2001 |
W. T. Hsieh, Y. K. Fang, K. H. Wu, W. J. lee, J. J. Ho, and C. W. Ho,Using Porous Silicon As Semi-Insulating Subsrate for β-SiC High Temperature Optical-Sensing Devices ,IEEE Trans. on Electron Devices ,vol.48 ,no.2 ,802-803 ,2001 |
| 2000 |
Wen-Tse Hsieh, Yean-Kuen Fang, W. J. Lee, Kuen-Hsien Wu, Jyh-Jier Ho, Kui-Huin Chen, and S. Y. Huan,An a-SiGe:H Phototransistor Integrated with a Pd Film on glass substrate for Hydrogen Monitoring ,IEEE Trans. on Electron Devices ,vol47 ,no.5 ,pp.939-943 ,2000 |
| 2000 |
W. T. Hsieh, Y. K. Fang, W. J. Lee, C. W. Ho, K. H. Wu, J. J. Ho, and J. D. Hwang,Improvement of β-SiC/Si pn diode high temperature characteristics with porous silicon layer ,Electronics Letters ,vol.36 ,no.1 ,pp.87-88 ,2000 |
| 1999 |
Kuen-Hsien Wu, Yean-Kuen Fang, Jyh-Jier Ho, Wen-Tse Hsieh, and Tzer-Jing Chen,Novel SiC/Si heterojunction diode with high-temperature bi-directional N-shaped negative-differential-resistances for high temperature applications ,Solid-State Electronics ,vol.143 ,no.7 ,pp.1215-1217 ,1999 |
| 1998 |
Kuen-Hsien Wu, Yean-Kuen Fang, Jyh-Jier Ho, Wen-Tse Hsieh, and W. H. Chuang, and J. D. Hwang,A High Optical-Gain β-SiC Bulk-Barrier Phototransistor for High temperature Applications ,IEEE Photonics Technology Letters ,vol.10 ,no.11 ,pp.1611-1613 ,1998 |
| 1998 |
Kuen-Hsien Wu, Yean-Kuen Fang, Jyh-Jier Ho, Wen-Tse Hsieh, and Tzer-Jing Chen,Novel SiC/Si Heterostructure Negative Differential Resistance Diode for Use as Switch with High On/Off Current Ratio and Low Power Dissipation ,IEEE Electron Devices Lett. ,vol.19 ,no.8 ,pp.294-296 ,1998 |
| 1998 |
Kuen-Hsien Wu, Yean-Kuen Fang, Jyh-Jier Ho, Wen-Tse Hsieh, and Tzer-Jing Chen,An SiC/Si Heterostructure Negative Differential Resistance Diode for High-Temperature Applications ,Appl. Phys. Lett. ,vol.72 ,no.23 ,pp.3017-3019 ,1998 |
| 1998 |
Jyh-Jier Ho, Y. K. Fang, K. H. Wu, W. T. Hsieh, C. W. Chu, C. R. Huang, M. S. Ju and C. P. Chang,A High Sensitivity Lead-titanate (PbTiO3) Pyroelectric Thin-film Infrared Sensor with Temperature Isolation Improvement Structure ,IEEE Electron Devices Lett. ,vol.19 ,no.6 ,pp.189-191 ,1998 |
| 1998 |
Jyh-Jier Ho, Y. K. Fang, K. H. Wu, W. T. Hsieh, S. C. Huang, G. S. Chen, M. S. Ju and J. J. Lin,High-Speed Amorphous Silicon Germanium Infrared Sensors Prepared on Crystalline Silicon Substrates ,IEEE Trans. on Electron Devices ,vol.45 ,no.9 ,pp.2085-2088 ,1998 |
| 1998 |
Kuen-Hsien Wu, Yean-Kuen Fang, Wen-Tse Hsieh, and Jyh-Jier Ho, W. J. Lin, and J. D. Hwang,High-Responsivity Porous-SiC Thin-Film P-N Junction Photodetector ,Electronics Letters ,vol34 ,no.23 ,pp.2243-2244 .1998 |